Low-frequency trapping phenomena in AlSb/InAs HEMTs

Author

Kruppa, W. ; Boos, J.B.

Author_Institution

SFA Inc., Landover, MD, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

381

Lastpage

384

Abstract

Low-frequency trapping effects in AlSb/InAs/GaAs HEMTs were examined by measuring the transconductance in the frequency range from 1 Hz to 100 KHz. Several device variations with differing cap layers and doping techniques were compared. By varying the bias and temperature, information on the physical location and trap parameters was obtained. A level with an activation energy of 0.12 eV and associated with the AlSb or its interfaces was found. Several other levels associated with different cap layers were also observed

Keywords

III-V semiconductors; aluminium compounds; deep levels; defect states; electric admittance; gallium arsenide; high electron mobility transistors; indium compounds; interface states; semiconductor device noise; 0.35 mum; 1 Hz to 100 kHz; 100 to 300 K; AlSb-InAs-GaAs; AlSb/InAs/GaAs HEMTs; Arrhenius plot; activation energy; bias variation; cap layers; deep level traps; dispersion effects; doping techniques; low frequency noise; low-frequency trapping phenomena; temperature variation; transconductance; trap parameters; Electron mobility; Electron traps; Frequency; HEMTs; Impact ionization; Leakage current; MODFETs; Temperature; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522159

Filename

522159