DocumentCode
3133725
Title
A novel active variable gain X-band amplifier in SiGe technology
Author
Corbiere, Remi ; Louis, Bruno ; Tartarin, Jean-Guy
Author_Institution
Université de Toulouse, France
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
In this paper, a new structure based on variable gain amplifiers (VGAs) in SiGe technology with high linearity (Pin1dB > 8 dBm) and high dynamic range (> 30 dB) under 3.3 V is presented. In this proposed technique, two VGAs and a passive attenuator are used to improve the linearity especially at high attenuation. The simulated gain errors are less than +/− 0.1 dB for a 0.5 dB step over the whole dynamic gain range (31.5 dB). The Pin1dB is better than 8 dBm at the maximum gain of 8 dB and better than 22 dBm above 16 dB of attenuation.
Keywords
Attenuation; Attenuators; Circuits; Dynamic range; Gain; Germanium silicon alloys; III-V semiconductor materials; Linearity; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5517091
Filename
5517091
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