Title :
Characterization and application of highly sensitive infra-red emission microscopy for microprocessor backside failure analysis
Author :
Hoe, Loh Ter ; Mun, Yee Wai ; Yan, Chew Yin
Author_Institution :
Intel Technol. Malaysia Sdn. Bhd., Malaysia
Abstract :
The HgCdTe infrared emission microscope (IREM) system has demonstrated about 10× sensitivity gain over the conventional silicon based CCD system for die backside near-silicon bandgap photon-emission detection. The authors´ IREM system is also designed to be directly dockable to testers, eliminating the device-under-test to tester cable interface. In presenting three failure analysis cases, we demonstrate that the IREM coupled with backside sample preparation techniques also offers additional capability in detection of thermal emission spots, especially for failure analysis of flip-chip packaged ICs
Keywords :
II-VI semiconductors; cadmium compounds; energy gap; failure analysis; flip-chip devices; infrared detectors; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; mercury compounds; microprocessor chips; optical microscopy; sensitivity; specimen preparation; DUT-tester cable interface; HgCdTe; HgCdTe infrared emission microscope system; IREM system; backside sample preparation techniques; die backside near-silicon bandgap photon-emission detection; direct tester docking; failure analysis; flip-chip packaged ICs; infra-red emission microscopy; microprocessor backside failure analysis; sensitivity; silicon based CCD system; thermal emission spots; Charge coupled devices; Failure analysis; Microprocessors; Microscopy; Optical attenuators; Optical sensors; Packaging; Silicon; Stimulated emission; System testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
DOI :
10.1109/IPFA.1999.791316
