Title :
A comparative study of the low frequency noise in InP based heterojunction field effect transistors (HFETs)
Author :
Rojo-Romeo, P. ; Viktorovitch, P. ; Letartre, X. ; Tardy, J. ; Thomson, D. ; Simmons, J.G.
Author_Institution :
Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France
Abstract :
In this work we present a comparative study of the low frequency noise in different types of HFETs based on an InP substrate. Structures with different barriers (AlInAs, InP or a combination of both) and different channels (InGaAs, InGaAsP and InP) materials were investigated. Also, experiments on plain doped AlInAs and AlGaAs resistors were performed for comparison. This study concentrates on LFN sources induced by the distribution of traps within the different layers and interfaces which constitute the structures, resulting in channel carrier number fluctuations. Experiments were made on structures using a TLM configuration
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; current fluctuations; defect states; gallium arsenide; high electron mobility transistors; indium compounds; interface states; semiconductor device noise; 1 Hz to 100 kHz; 1/f like noise; AlInAs-GaInAs; GaAlAs-GaInAs-GaAs; InP; InP based heterojunction field effect transistors; InP substrate; InP-GaInAs; MODFET; TLM configuration; barriers; channel carrier number fluctuations; channels; current noise spectrum; interface traps; low frequency noise; plain doped AlGaAs resistors; plain doped AlInAs resistors; room temperature; trap distribution; FETs; Gallium arsenide; HEMTs; Heterojunctions; Indium gallium arsenide; Indium phosphide; Length measurement; Low-frequency noise; MODFET circuits; Resistors;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522160
