Title :
Impact of failure criteria on electromigration of W-plug contact
Author :
Qiang, Guo ; Foo, Lo Keng ; Xu, Zeng ; Xu, Liu ; Pei, Yao ; Ya, Tan Pee
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
This work presents an investigation of the impact of failure criteria on electromigration of a W-plug contact by using high resolution resistance measurement (HRRM). It is found that the median time to failure, T50, linearly increases with an increasing failure criterion, while the shape parameter, σ, shows little change. The choice of failure criterion has a significant impact on the activation energy Ea calculated based on the resistance measurement. It has been demonstrated that this impact is an artificial result due to calculation without taking the ambient temperature dependent effects into account. The actual Ea is found to be 0.78 eV, independent of the failure criterion. It suggests that interfacial diffusion, rather than bulk diffusion, is a primary mechanism of bamboo structures in EM measurements
Keywords :
diffusion; electric resistance measurement; electromigration; failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; tungsten; 0.78 eV; EM measurements; W; W-plug contact; activation energy; ambient temperature dependent effects; bamboo structure; bulk diffusion; electromigration; failure criteria; failure criterion selection; high resolution resistance measurement; interfacial diffusion; median time to failure; shape parameter; Circuit testing; Degradation; Electrical resistance measurement; Electromigration; Integrated circuit interconnections; Metallization; Scanning electron microscopy; Silicon; Temperature; Tin;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
DOI :
10.1109/IPFA.1999.791319