The electric field, oxide thickness, time and fluence dependences of trap generation in silicon oxides and their support of the E-model of oxide breakdown

Author

Qian, D. ; Dumin, D.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA

fYear

1999

fDate

1999

Firstpage

145

Lastpage

150

Abstract

The trap generation in oxides between 5 nm and 13.5 nm thick has been measured as a function of the oxide electric field, oxide thickness, stress time, and electron fluence during constant voltage stresses. It was found that the trap generation could be accurately described by an Eyring equation of the form NT=1.5×10²¹exp^{(-0.32+0.012E0)}kT/×t ^0.2 for all thicknesses of oxides and all stresses. This Eyring formulation for the trap generation supports the electric field model (E-model) of oxide breakdown. The activation energy obtained for trap generation predicts a different activation energy for breakdown very close to that found in long-time, low-field breakdown measurements

Keywords

CMOS integrated circuits; dielectric thin films; electric breakdown; electric fields; electron traps; hole traps; integrated circuit measurement; integrated circuit modelling; silicon compounds; 5 to 13.5 nm; CMOS processes; E-model; Eyring equation; Eyring formulation; SiO₂-Si; activation energy; constant voltage stresses; electric field model; fluence dependence; low-field breakdown measurements; oxide breakdown; oxide electric field; oxide thickness; oxide trap generation; silicon oxides; stress time; time; trap generation; Anodes; Area measurement; Dielectric breakdown; Electric breakdown; Electron traps; Predictive models; Silicon; Stress measurement; Thickness measurement; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

Print_ISBN

0-7803-5187-8

Type

conf

DOI

10.1109/IPFA.1999.791324

Filename

791324