Title :
Superior confinement of two-dimensional electron gas in an In0.52Al0.48As-In0.53Ga0.47 As modulation-doped structure by inserting a strained InAs quantum well
Author :
Akazaki, Talsushi ; Nitta, Junsaku ; Takayanagi, Hideaki ; Enoki, Takatomo ; Arai, Kunihiro
Author_Institution :
NTT Basic Res. Labs., Atsugi, Japan
Abstract :
We give a detailed analysis based on Shubnikov-de Haas measurement of the effective mass of 2DEG in an InAs-inserted-channel InAlAs/InGaAs modulation-doped structure. The measured effective mass of the InAs-inserted-channel inverted MD structure was found to be 0.044 m0, when ns=2.08×1012 cm-2 . The results indicate that almost all of the 2DEG forms in the strained InAs quantum well. They show that the InAs-inserted-channel MD structure improves the electron confinement, since the 2DEG is confined in the InAs quantum well with the thickness of 4 nm. Therefore, it is possible to utilize the excellent transport properties of InAs by the InAs-inserted-channel MD structure
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; effective mass; gallium arsenide; indium compounds; semiconductor heterojunctions; semiconductor quantum wells; two-dimensional electron gas; 2DEG effective mass; InAlAs/InGaAs modulation-doped structure; InP; Shubnikov-de Haas measurement; electron confinement; strained InAs quantum well insertion; transport properties; two-dimensional electron gas; Conducting materials; Density measurement; Effective mass; Electrons; Indium compounds; Indium phosphide; Magnetic field measurement; Magnetic fields; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522165
