InAlAs/InGaAs HEMT using InGaP Schottky contact layer

Author

Amano, M. ; Fujita, S. ; Hosoi, S. ; Noda, T. ; Sasaki, A. ; Ashizawa, Y.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

416

Lastpage

419

Abstract

In this study, Schottky diode characteristics have been improved by using both annealed Pt for Schottky contact metal and undoped InAlAs for underlayer of the InGaP layer. InGaP-SC-HEMTs with 0.1 μm T-shaped gate have been fabricated using Pt-based metals/InGaP/InAlAs Schottky gate contact in order to clarify the influence of insertion of a strained InGaP layer on DC and RF performances. The results show that gate characteristics of InGaP-SC-HEMTs were improved, and high g_mmax and f_T were obtained for 0.1 μm T-gate devices. Moreover, the lower R_s of InGaP-SC-HEMTs is expected to provide better noise characteristics than those of conventional HEMTs

Keywords

III-V semiconductors; S-parameters; Schottky barriers; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device metallisation; semiconductor device noise; 0.1 mum; 1 to 30 GHz; 140 GHz; DC performance; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InGaP; InGaP Schottky contact layer; InGaP-SC-HEMTs; Pt-InGaP-InAlAs; RF performance; S parameters; Schottky contact metal; Schottky diode characteristics; T-shaped gate; annealed Pt; gate characteristics; noise characteristics; strained InGaP layer; undoped InAlAs underlayer; Annealing; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Radio frequency; Schottky barriers; Schottky diodes; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522168

Filename

522168