DocumentCode
3134000
Title
Transparent testing for intra-word memory faults
Author
Voyiatzis, Ioannis ; Efstathiou, C. ; Sgouropoulou, C.
fYear
2013
fDate
16-18 Dec. 2013
Firstpage
1
Lastpage
2
Abstract
Transparent BIST schemes for RAM modules assure the preservation of the memory contents during periodic testing. Symmetric Transparent Built-in Self Test (BIST) schemes skip the signature prediction phase required in traditional transparent BIST, achieving considerable reduction in test time. In this work we propose a Symmetric transparent BIST scheme that can be utilized to serially apply march tests bit-by-bit to word-organized RAM´s, in a transparent manner, in the sense that the initial contents of the RAM are preserved. To the best of our knowledge, this is the first scheme proposed in the open literature to target intraword faults in the concept of transparent BIST for RAMs.
Keywords
built-in self test; random-access storage; BIST schemes; RAM modules; intraword memory faults; memory contents; periodic testing; signature prediction phase; symmetric transparent built in self test; transparent testing; Built-in self-test; Couplings; Europe; Hardware; Polynomials; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Test Symposium (IDT), 2013 8th International
Conference_Location
Marrakesh
Type
conf
DOI
10.1109/IDT.2013.6727144
Filename
6727144
Link To Document