Title :
Energy dependence of interface trap density-investigated by the DCIV method [MOSFETs]
Author :
Jie, B.B. ; Li, M.-F. ; Lo, K.F.
Author_Institution :
Centre for Integrated Circuit Failure Analysis & Reliability, Nat. Univ. of Singapore, Singapore
Abstract :
Based on DC current-voltage (DCIV) measurements, a new method is proposed for evaluation of the energy dependence of interface trap density in deep sub-μm MOSFETs. An emitter forward bias Veb dependent parameter NEFF(Veb) is introduced and is calculated from the magnitude of the DCIV spectrum peak. The energy dependence of the interface trap density can be acquired from comparing the experimental and theoretical NEFF(Veb) curves using least squares optimisation. The method is illustrated with a 0.4 μm channel length pMOSFET subject to Fowler-Nordheim stressing
Keywords :
MOSFET; electron traps; electronic density of states; hole traps; interface states; least squares approximations; optimisation; semiconductor device measurement; semiconductor device models; 0.4 micron; DC I-V measurements; DC current-voltage measurements; DCIV method; DCIV spectrum peak; Fowler-Nordheim stressing; MOSFETs; channel length; emitter forward bias dependent parameter; energy dependence; interface trap density; least squares optimisation; pMOSFET; Charge carrier processes; Current measurement; Density measurement; Electron traps; Energy capture; Energy measurement; Failure analysis; Radiative recombination; Spontaneous emission; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
DOI :
10.1109/IPFA.1999.791335
