Title :
InGaAs insulated gate field effect transistors using silicon interlayer based passivation technique
Author :
Suzuki, S. ; Kodama, S. ; Tomozawa, H. ; Hasegawa, H.
Author_Institution :
Res. Center for Interface Quantum Electronics, Hokkaido Univ., Sapporo, Japan
Abstract :
The purpose of this paper is to investigate the applicability of the Si interface control layer (ICL) based passivation technique to construction of InGaAs insulated gate field effect transistor (IGFET) devices such as MISFETs and HEMTs. HF treatment were applied to InGaAs and InAlAs surfaces. Basic insulator-semiconductor structures were fabricated and characterized by XPS, I-V and MIS C-V techniques. Fat MISFETs and HEMTs were also fabricated and the feasibility of the present technique is successfully demonstrated
Keywords :
III-V semiconductors; MIS capacitors; MISFET; X-ray photoelectron spectra; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; interface states; passivation; semiconductor technology; silicon; surface treatment; HEMTs; HF treatment; I-V characteristics; InGaAs insulated gate field effect transistors; InP; MIS C-V techniques; MIS capacitor structures; Si interface control layer; Si interlayer based passivation; XPS; fat MISFETs; insulator-semiconductor structures; FETs; HEMTs; Hafnium; Indium compounds; Indium gallium arsenide; Insulation; MISFETs; MODFETs; Passivation; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522173
