Title :
High-speed InP/InGaAs HBT with reduced intrinsic transit time
Author :
Khrenov, G. ; Kulkova, E.
Author_Institution :
Comput. Solid State Phys. Lab., Aizu Univ., Japan
Abstract :
The high-speed characteristics of InP/InGaAs HBTs with two different collector structures have been investigated using an ensemble Monte Carlo particle simulator. A dramatic decrease of the collector delay time has been observed for HBTs with a non-uniformly doped (i-p +-i-n+) collector structure. The collector delay time is reduced due to the extension of the velocity overshoot region in the collector. The parameters of HBT with proposed collector structure (i-p+-i-n+) have been optimized in order to obtain the ultimate high-frequency performance under high collector voltage
Keywords :
III-V semiconductors; Monte Carlo methods; delays; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; InP-InGaAs; InP/InGaAs HBT; collector delay time; electron drift velocity profiles; ensemble Monte Carlo particle simulator; high collector voltage; high-frequency performance; high-speed characteristics; i-p+-i-n+ collector structure; reduced intrinsic transit time; velocity overshoot region; Delay effects; Electrons; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Monte Carlo methods; Physics computing; Solid state circuits;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522175
