Title :
680 nm-band self-sustained pulsating AlGaInP visible laser diodes
Author :
Adachi, Hideto ; Kidoguchi, Isao ; Kamiyama, Satoshi ; Ohnaka, Kiyoshi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
We developed 680 nm-band AlGaInP visible laser diodes having very low noise characteristics with stable self-sustained pulsation for applications such as optical data storage. AlGaInP visible laser diodes are expected to become the next key device in a field of optical disk systems due to its shorter wavelength. Low relative intensity noise (RIN) is required for optical disk systems. Self-sustained pulsation is effective for the reduction of the noise. In the AlGaInP laser diodes, stable pulsating operation in the high temperature range was very difficult due to its low thermal conductivity. We successfully achieved the AlGaInP visible laser diodes with stable self-sustained pulsation and low noise in the temperature ranging from 20 to 50°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser noise; laser transitions; optical storage; semiconductor lasers; 20 to 50 degC; 680 nm; InP; high temperature range; low noise; low relative intensity noise; low thermal conductivity; noise reduction; optical data storage; optical disk systems; self-sustained pulsating AlGaInP visible laser diodes; stable pulsating operation; stable self-sustained pulsation; very low noise characteristics; Diode lasers; Noise reduction; Optical buffering; Optical noise; Optical refraction; Optical variables control; Power generation; Semiconductor device noise; Temperature distribution; Thermal conductivity;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522181