DocumentCode
3134233
Title
Nonlinear modeling of compound semiconductor HEMTs state of the art
Author
Curtice, Walter R.
Author_Institution
W.R. Curtice Consulting, Washington Crossing, PA, USA
fYear
2010
fDate
23-28 May 2010
Firstpage
1194
Lastpage
1197
Abstract
This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications. Some simple physics shows why SPICE models, or compact models, cannot contain all aspects of the device operation. Because the models are incomplete, any given model may always be improved and thus, modifiable user-defined compact models are preferred. In particular, Verilog-A coded models are shown to have many desirable features. Minimum modeling requirements for accurate system and circuit simulation are described, as well as present modeling techniques.
Keywords
SPICE; high electron mobility transistors; semiconductor device models; SPICE models; Verilog; compact models; compound semiconductor HEMT; compound semiconductor HFET; microwave power applications; nonlinear modeling; Circuit simulation; Current measurement; Electron mobility; Gallium nitride; HEMTs; Hardware design languages; MODFETs; Physics; Power system modeling; SPICE; MODFETs; SPICE; Transistors; power amplifiers; simulation software;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5517123
Filename
5517123
Link To Document