DocumentCode :
3134233
Title :
Nonlinear modeling of compound semiconductor HEMTs state of the art
Author :
Curtice, Walter R.
Author_Institution :
W.R. Curtice Consulting, Washington Crossing, PA, USA
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1194
Lastpage :
1197
Abstract :
This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications. Some simple physics shows why SPICE models, or compact models, cannot contain all aspects of the device operation. Because the models are incomplete, any given model may always be improved and thus, modifiable user-defined compact models are preferred. In particular, Verilog-A coded models are shown to have many desirable features. Minimum modeling requirements for accurate system and circuit simulation are described, as well as present modeling techniques.
Keywords :
SPICE; high electron mobility transistors; semiconductor device models; SPICE models; Verilog; compact models; compound semiconductor HEMT; compound semiconductor HFET; microwave power applications; nonlinear modeling; Circuit simulation; Current measurement; Electron mobility; Gallium nitride; HEMTs; Hardware design languages; MODFETs; Physics; Power system modeling; SPICE; MODFETs; SPICE; Transistors; power amplifiers; simulation software;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517123
Filename :
5517123
Link To Document :
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