• DocumentCode
    3134233
  • Title

    Nonlinear modeling of compound semiconductor HEMTs state of the art

  • Author

    Curtice, Walter R.

  • Author_Institution
    W.R. Curtice Consulting, Washington Crossing, PA, USA
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1194
  • Lastpage
    1197
  • Abstract
    This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications. Some simple physics shows why SPICE models, or compact models, cannot contain all aspects of the device operation. Because the models are incomplete, any given model may always be improved and thus, modifiable user-defined compact models are preferred. In particular, Verilog-A coded models are shown to have many desirable features. Minimum modeling requirements for accurate system and circuit simulation are described, as well as present modeling techniques.
  • Keywords
    SPICE; high electron mobility transistors; semiconductor device models; SPICE models; Verilog; compact models; compound semiconductor HEMT; compound semiconductor HFET; microwave power applications; nonlinear modeling; Circuit simulation; Current measurement; Electron mobility; Gallium nitride; HEMTs; Hardware design languages; MODFETs; Physics; Power system modeling; SPICE; MODFETs; SPICE; Transistors; power amplifiers; simulation software;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5517123
  • Filename
    5517123