High-speed InP-based strained MQW ridge waveguide laser

Author

Gutierrez-Aitken, A.L. ; Yoon, H. ; Bhattacharya, P.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

476

Lastpage

479

Abstract

A high-speed ridge waveguide laser with undoped strained MQW active region was fabricated and characterized. The lasers demonstrated typical threshold currents of ~20 mA. The electrical impedance of the laser demonstrates -3 dB bandwidths >34 GHz at high bias currents, indicating that the parasitics in our devices are very small. The best laser demonstrated a -3 dB modulation bandwidth of 20 GHz. This is the highest bandwidth achieved for a ridge waveguide laser operating at 1.55 μm

Keywords

III-V semiconductors; electric impedance; high-speed optical techniques; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 1.55 mum; 20 GHz; 20 mA; 34 GHz; InGaAs; InP; InP-InGaAsP; bandwidths; electrical impedance; high bias currents; high-speed InP-based strained MQW ridge waveguide laser; modulation bandwidth; parasitics; threshold currents; undoped strained MQW active region; Bandwidth; Gold; Impedance; Indium phosphide; Laser theory; Masers; Optical waveguides; Quantum well devices; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522183

Filename

522183