Waveguide-fed PIN-HFET receiver at 2.5 Gbit/s integrated on InP

Author

Giraudet, L. ; Bruno, A. ; Legros, E. ; Ghirardi, F. ; Berthier, P. ; Scavennec, A. ; Carenco, A. ; Bland, S.W. ; Davies, J.I.

Author_Institution

Lab. de Bagneux, CNET, Bagneux, France

fYear

1995

fDate

9-13 May 1995

Firstpage

520

Lastpage

523

Abstract

We report the monolithic integration of a building block, a waveguide-fed photoreceiver, comprising a semiconductor waveguide, a PIN photodiode, and a 3 stage low noise preamplifier, based on 0.5 μm gate length high performance HFETs. Internal sensitivities better than -27dBm at 2.5Gbit/s and -25dBm at 5Gbit/s have been measured

Keywords

III-V semiconductors; field effect integrated circuits; indium compounds; integrated optoelectronics; optical noise; optical receivers; optical waveguides; p-i-n photodiodes; preamplifiers; sensitivity; wavelength division multiplexing; 0.5 mum; 2.5 Gbit/s; InP; PIN photodiode; building block; high performance HFETs; internal sensitivities; low noise preamplifier; monolithic integration; semiconductor waveguide; waveguide-fed PIN-HFET receiver; Chemicals; HEMTs; Indium phosphide; MODFETs; Optical fiber devices; Optical fiber polarization; Photodiodes; Photoluminescence; Planar waveguides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522194

Filename

522194