DocumentCode
3134614
Title
InxGa1-xAs/InAsyP1-y detector for near infrared (1-2.6 μm)
Author
Murakami, T. ; Takahasi, H. ; Nakayama, M. ; Miura, Y. ; Takemo, K. ; Hara, D.
Author_Institution
Hamamatsu Photonics KK, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
528
Lastpage
531
Abstract
This paper describes a high performance InxGa1-x As/InAsyP1-y detector with spectral response range from 1 to 2.6 μm. The detector is fabricated using chloride vapor phase epitaxy grown wafer. Details of the wafer are presented. The diameter of the detector is 1 mm φ. Dark current at -1 V, shunt resistance and responsivity at peak wavelength (2.35 μm) is 7 μA, 6kΩ, 1.2 A/W, respectively
Keywords
III-V semiconductors; dark conductivity; electrical resistivity; gallium arsenide; indium compounds; infrared detectors; optical fabrication; semiconductor growth; vapour phase epitaxial growth; 1 V; 1 mm; 1 to 2.6 mum; 2.35 mum; 7 muA; InxGa1-xAs/InAsyP1-y detector; InGaAs-InAsP; chloride vapor phase epitaxy grown wafer; high performance; near infrared detector; peak wavelength; responsivity; shunt resistance; spectral response range; Absorption; Crystalline materials; Dark current; Epitaxial growth; Indium phosphide; Infrared detectors; Optical materials; Photodiodes; Photonic band gap; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522196
Filename
522196
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