Title :
Strain effects in InAsP/InP MQW modulators for 1.06 μm operation
Author :
Stavrinou, P.N. ; Haywood, S.K. ; Hart, L. ; Hopkinson, M. ; David, J.P.R. ; Hill, G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
In summary we have studied the electroabsorption response of InAsP-InP MQW p-i-n structures grown for the first time by SS-MBE. Some partial relaxation has taken place due to the cumulative effects of strain in successive QWs. Despite this the electrical properties of the devices were not degraded and demonstrated leakage currents of less than InA for up to 16 V reverse bias
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; leakage currents; molecular beam epitaxial growth; optical fabrication; p-i-n photodiodes; semiconductor growth; semiconductor quantum wells; spectral line breadth; 1 nA; 1.06 mum; 16 V; InAsP-InP; InAsP-InP MQW p-i-n structures; InAsP/InP MQW modulators; SS-MBE; cumulative effects; electrical properties; electroabsorption response; leakage currents; partial relaxation; reverse bias; strain effects; successive QWs; Capacitive sensors; Educational institutions; Gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Quantum well devices; Reflection; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522198
