DocumentCode
3134740
Title
Theoretical analysis of enhanced electroabsorption change due to light-hole subband transition in lattice-matched wide quantum wells
Author
Yamanaka, Takayuki ; Wakita, Koichi ; Yokoyama, Kiyoyuki
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
544
Lastpage
546
Abstract
In this work, we have studied theoretically the enhancement of TE-polarized electroabsorption EA change in lattice-matched InGaAsP MQW structures. It is demonstrated that the light-hole subband transition plays the dominant role in the enhanced EA change in wide quantum wells
Keywords
III-V semiconductors; carrier mobility; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; InGaAsP; TE-polarized electroabsorption EA change; enhanced EA change; enhanced electroabsorption change; lattice-matched InGaAsP MQW structures; lattice-matched wide quantum wells; light-hole subband transition; theoretical analysis; Absorption; Chirp modulation; Electron optics; Frequency modulation; Optical modulation; Oscillators; Potential well; Quantum mechanics; Quantum well devices; Stark effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522200
Filename
522200
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