Title :
Losses analysis in power semiconductor devices of a Single-Phase Active Multi-level Rectifier with voltage sag ride-through capability
Author :
Godínez, V. ; Lira, J. ; Núñez, C.
Author_Institution :
Eng. Dept., Univ. Autonoma de San Luis Potosi, San Luis Potosi
Abstract :
In recent years, the use of active rectifiers has become common to correct problems as low power factor and harmonics in the AC mains, besides it can compensate the DC bus before load changes. Some of these rectifiers are also able to compensate voltage sags. Power losses studies have been developed for this kind of topologies; however, the behavior of these is not mentioned under voltage sags conditions. In this paper, a power losses analysis of semiconductor devices of a single-phase active multi-level rectifier is presented, which takes into account the behavior of its variables in function of AC voltage, considering voltage sags. This above mentioned is carried out by means of mathematical analysis of the topology and simulations and validated by experimental tests in a 1 kVA prototype.
Keywords :
mathematical analysis; power factor; power supply quality; rectifying circuits; apparent power 1 kVA; losses analysis; low power factor; mathematical analysis; power semiconductor devices; single-phase active multilevel rectifier; voltage sag ride-through capability; Mathematical analysis; Power quality; Power semiconductor devices; Power system harmonics; Power system stability; Reactive power; Rectifiers; Semiconductor devices; Topology; Voltage fluctuations;
Conference_Titel :
Power Electronics Congress, 2008. CIEP 2008. 11th IEEE International
Conference_Location :
Morelos
Print_ISBN :
978-1-4244-2718-5
Electronic_ISBN :
978-1-4244-2719-2
DOI :
10.1109/CIEP.2008.4653833