DocumentCode :
3134820
Title :
Silicon MEMS packages for coplanar MMICs
Author :
Kim, Sung-Jin ; Kwon, Young-soo ; Lee, Hai-Young
Author_Institution :
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
fYear :
2000
fDate :
2000
Firstpage :
664
Lastpage :
667
Abstract :
The MEMS package using a common resistivity silicon (1~30 Ω-Cm) carrier for coplanar MMICs is proposed in order to reduce coplanar parasitic problems of leakage, coupling and resonance. The proposed carrier scheme is verified by fabricating and measuring GaAs CPWs on the three types of Si-carriers (Gold-plated carrier, 15 Ω-Cm Si-carrier, HRS carrier) in the frequency from 0.5 to 40 GHz. The proposed MEMS package using the 15 Ω-Cm Si-carrier shows parasitic-free performance since the lossy Si-carrier effectively absorbs and suppresses the parasitic leakage
Keywords :
III-V semiconductors; MMIC; coplanar waveguide components; elemental semiconductors; gallium arsenide; integrated circuit packaging; micromechanical devices; silicon; 0.5 to 40 GHz; GaAs; GaAs CPW; HRS carrier; MEMS package; Si; common resistivity silicon carrier; coplanar MMIC; gold-plated carrier; parasitic coupling; parasitic leakage; parasitic resonance; Conductivity; Coplanar waveguides; Costs; Frequency; Gold; MMICs; Micromechanical devices; Millimeter wave communication; Packaging; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
Type :
conf
DOI :
10.1109/APMC.2000.925920
Filename :
925920
Link To Document :
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