DocumentCode :
3134827
Title :
Low noise, indium phosphide monolithic microwave integrated circuit amplifiers for radioastronomy
Author :
Gough, R.G. ; Sinclair, M.W.
Author_Institution :
Australia Telescope Nat. Facility, CSIRO, Epping, NSW, Australia
fYear :
2000
fDate :
2000
Firstpage :
668
Lastpage :
672
Abstract :
A range of low-noise amplifiers have been designed for both the new and the proposed observing bands for the Australia Telescope National Facility Compact Array antennas. The amplifiers, which operate in three bands in the range 16 GHz to 115 GHz, use indium phosphide based high electron mobility transistor, monolithic microwave integrated circuit technology. We will describe the amplifier design and report the room temperature on-wafer performance of these amplifiers
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; radioastronomical techniques; 16 to 115 GHz; Australia Telescope National Facility Compact Array antenna; InP; indium phosphide high electron mobility transistor; low noise amplifier; monolithic microwave integrated circuit technology; radioastronomy; Antenna arrays; Australia; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Optical design; Telescopes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
Type :
conf
DOI :
10.1109/APMC.2000.925921
Filename :
925921
Link To Document :
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