DocumentCode
3134827
Title
Low noise, indium phosphide monolithic microwave integrated circuit amplifiers for radioastronomy
Author
Gough, R.G. ; Sinclair, M.W.
Author_Institution
Australia Telescope Nat. Facility, CSIRO, Epping, NSW, Australia
fYear
2000
fDate
2000
Firstpage
668
Lastpage
672
Abstract
A range of low-noise amplifiers have been designed for both the new and the proposed observing bands for the Australia Telescope National Facility Compact Array antennas. The amplifiers, which operate in three bands in the range 16 GHz to 115 GHz, use indium phosphide based high electron mobility transistor, monolithic microwave integrated circuit technology. We will describe the amplifier design and report the room temperature on-wafer performance of these amplifiers
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; radioastronomical techniques; 16 to 115 GHz; Australia Telescope National Facility Compact Array antenna; InP; indium phosphide high electron mobility transistor; low noise amplifier; monolithic microwave integrated circuit technology; radioastronomy; Antenna arrays; Australia; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Optical design; Telescopes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.925921
Filename
925921
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