Title :
Design and optimization of new high performance silicon photodiodes
Author :
Swe, T.N. ; Yeo, K.S. ; Chew, K.W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
Various types of proposed photodiodes fabricated using the 0.25 μm CMOS technology are presented. The effects of different design layouts on the performance are compared for a wide range of light intensity, photodiode current, dark current and diode capacitance. The results show that the proposed photodiodes outperforms the best photodiode reported so far
Keywords :
elemental semiconductors; photodiodes; silicon; 0.25 micron; CMOS technology; Si; design optimization; silicon photodiode; CMOS technology; Capacitance; Dark current; Design optimization; Fabrication; Integrated circuit technology; Photoconductivity; Photodiodes; Semiconductor diodes; Silicon;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925925
