DocumentCode
3134853
Title
Design and optimization of new high performance silicon photodiodes
Author
Swe, T.N. ; Yeo, K.S. ; Chew, K.W.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fYear
2000
fDate
2000
Firstpage
685
Lastpage
688
Abstract
Various types of proposed photodiodes fabricated using the 0.25 μm CMOS technology are presented. The effects of different design layouts on the performance are compared for a wide range of light intensity, photodiode current, dark current and diode capacitance. The results show that the proposed photodiodes outperforms the best photodiode reported so far
Keywords
elemental semiconductors; photodiodes; silicon; 0.25 micron; CMOS technology; Si; design optimization; silicon photodiode; CMOS technology; Capacitance; Dark current; Design optimization; Fabrication; Integrated circuit technology; Photoconductivity; Photodiodes; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.925925
Filename
925925
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