DocumentCode
3134934
Title
Complementary spintronic logic with spin hall effect driven magnetic tunnel junction
Author
Kang, W. ; Wang, Z. ; Zhang, Y. ; Ravelosona, D. ; Zhao, W.
Author_Institution
EIE, Beihang Univ., Beijing, China
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
We propose a novel CSL family based on the SHE-MTJ device to perform CMOS-like logic design paradigm . We highlight the capability of the proposed CSL approach and realize all the Boolean logic functions using the proposed CSL concept . The CSL paradigm provides a unified standard design methodology for advanced spintronic logic computing beyond the classical Von-Neumann architecture.
Keywords
Boolean functions; magnetic logic; magnetic tunnelling; magnetoelectronics; Boolean logic functions; CMOS like logic design paradigm; CSL family; SHE-MTJ device; classical Von-Neumann architecture; complementary spintronic logic; magnetic tunnel junction; spin Hall effect; Computer architecture; Inverters; Logic functions; Logic gates; Magnetic tunneling; Magnetoelectronics; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157255
Filename
7157255
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