GaInAsP/InP multiple-reflector micro-cavity structure fabricated by EB lithography and selective etching

Author

Shin, Ki-Chul ; Tamura, Munehisa ; Serizawa, Naoki ; Kurihashi, Shinji ; Tamura, Shigeo ; Hotta, Masatsugu ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

557

Lastpage

560

Abstract

A very uniform multiple-reflector micro-cavity structure was fabricated by electron beam (EB) lithography and selective wet chemical etching. Very small standard deviation of the gap width between micro-cavities, which was only 22 nm for the average value of 762 nm, enabled us to observe a clear modulation in PL spectrum due to multiple reflection

Keywords

III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; photoluminescence; semiconductor lasers; GaInAsP-InP; electron beam lithography; fabrication; multiple-reflector micro-cavity; photoluminescence spectrum; selective wet chemical etching; Anisotropic magnetoresistance; Crystalline materials; Etching; Histograms; Indium phosphide; Lithography; Optical device fabrication; Optical materials; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522204

Filename

522204