First order gratings for gain coupled GaInAsP DFB-lasers made by maskless focused ion beam patterning

Author

Reithmaier, J.P. ; Orth, A. ; Muller, J. ; Forchel, A. ; Weber, J. ; Gyuro, I. ; Zielinski, E.

Author_Institution

Wurzburg Univ., Germany

fYear

1995

fDate

9-13 May 1995

Firstpage

569

Lastpage

572

Abstract

First order gratings in GaInAsP laser structures were defined by maskless focused ion beam implantation. The optically pumped devices show laser operation at 77 and 300 K. All lasers operate in a single longitudinal mode which is typical for the gain coupled distributed feedback effect. The implanted gratings are thermally stable up to 700°C and are suitable for an overgrowth process by metal organic vapour phase epitaxy

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; focused ion beam technology; gallium arsenide; indium compounds; ion implantation; optical fabrication; semiconductor lasers; 300 K; 700 C; 77 K; GaInAsP; first order gratings; gain coupled distributed feedback lasers; maskless focused ion beam implantation; metal organic vapour phase epitaxy; optically pumped devices; overgrowth; single longitudinal mode; thermal stability; Distributed feedback devices; Gratings; Ion beams; Laser feedback; Laser modes; Optical devices; Optical feedback; Optical pumping; Particle beam optics; Pump lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522207

Filename

522207