Thermal management of MOSFET junction temperature in RF amplifier

Author

Qi, Zhongwei ; Dong, Huaiyu ; Wang, Yahong ; Reif, John W.

Author_Institution

Gen. Electr. Technol. Infrastruct. Healthcare, Waukesha, WI, USA

fYear

2011

fDate

20-24 March 2011

Firstpage

166

Lastpage

174

Abstract

MOSFETs in an RF amplifier dissipate high heat flux due to switching and conduction loss. MOSFET´s junction temperature affects product reliability adversely. This paper presents a thermal management method used in an RF amplifier development with junction to case temperature rise transient analysis, Thermal Interface Material (TIM) testing, clamping structural Finite Element Analysis (FEA), and Computational Fluid Dynamics (CFD) aided cold plate optimization. Using the systematic method presented in this paper, thermal management of MOSFET junction temperature can be implemented with clear insights of temperature budget consumption in each section, and optimization options.

Keywords

MOSFET; computational fluid dynamics; cooling; finite element analysis; optimisation; radiofrequency amplifiers; semiconductor device reliability; thermal management (packaging); MOSFET junction temperature; clamping structural finite element analysis; cold plate optimization; computational fluid dynamics; conduction loss; heat flux; product reliability; radiofrequency amplifier; switching loss; temperature rise transient analysis; thermal interface material; thermal management; Clamps; Cold plates; Junctions; MOSFET circuits; Testing; Thermal resistance; CFD; Clamping Pressure FEA; Cold Plate; MOSFET Junction Temperature Transient Analysis; TIM Characterization Testing; Thermal Management;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2011 27th Annual IEEE

Conference_Location

San Jose, CA

ISSN

1065-2221

Print_ISBN

978-1-61284-740-5

Type

conf

DOI

10.1109/STHERM.2011.5767195

Filename

5767195