Title :
Single stage amplifiers on a CMOS grade silicon substrate using a polymer interlayer dielectric with strained silicon MOSFETs
Author :
Ternent, G. ; Edgar, D.L. ; McLelland, H. ; Williamson, F. ; Ferguson, S. ; Kaya, S. ; Wilkinson, C.D.W. ; Thayne, I.G. ; Fobelets, K. ; Hampson, J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
The design of single stage amplifiers based on a metal gate Si-SiGe MOSFET process on a 1 ohm.cm silicon substrate is presented. The amplifier design is based on 0.3 μm gate length MOSFETs with fT of 19.9 GHz and fmax 21 GHz integrated with low loss coplanar waveguide transmission lines and high quality factor spiral inductors realised on a 15 μm thick polymer dielectric. The performance of the amplifier, currently in fabrication, is presented
Keywords :
Ge-Si alloys; MMIC amplifiers; MOS analogue integrated circuits; Q-factor; coplanar waveguides; dielectric thin films; elemental semiconductors; field effect MMIC; inductors; integrated circuit design; polymer films; semiconductor materials; silicon; 0.3 micron; 15 micron; 4 to 21 GHz; CMOS grade Si substrate; NMOSFET; Si; Si-SiGe; coplanar waveguide transmission lines; high Q-factor spiral inductors; low loss CPW transmission lines; metal gate Si/SiGe MOSFET process; n-MOSFET; n-channel MOSFETs; polymer interlayer dielectric; quality factor; single stage amplifiers; spin-on dielectric process; strained Si MOSFETs; Coplanar transmission lines; Coplanar waveguides; Dielectric losses; Inductors; MOSFET circuits; Polymers; Propagation losses; Q factor; Silicon; Spirals;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925945
