Title :
Low-cost Ku to Ka band MMICs using a commercially available Si/SiGe HBT process
Author :
Schumacher, Hermann ; Abele, P. ; Soenmez, E. ; Teppo, T.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ.
Abstract :
Using modifications to the lateral layout of a commercially available Si/SiGe heterojunction bipolar process only, we demonstrate significant performance improvements in terms of the maximum frequency of oscillation, as well as the microwave noise performance. The optimized HBTs are then used in prototype MMICs in the Ku and lower Ka band. The mature Si/SiGe technology, combined with extremely compact circuit design and layout techniques, results in low-cost integrated circuits enabling consumer-oriented systems up to Ka band
Keywords :
Ge-Si alloys; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit layout; integrated circuit noise; integrated circuit technology; semiconductor materials; silicon; 15 to 20 GHz; Ka-band MMICs; Ku-band MMICs; SHF; Si-SiGe; Si/SiGe HBT process; Si/SiGe heterojunction bipolar process; commercially available HBT process; compact circuit design techniques; compact layout techniques; consumer-oriented systems; integrated circuits; lateral layout modifications; low-cost MMICs; maximum frequency of oscillation; microwave noise performance; optimized HBTs; performance improvements; Circuit synthesis; Frequency; Germanium silicon alloys; Heterojunctions; Integrated circuit layout; Integrated circuit noise; Integrated circuit technology; MMICs; Prototypes; Silicon germanium;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925947
