Low-power synchronous oscillator in SiGe technology for UMTS 2000 applications

Author

Deval, Y. ; Begueret, J-B ; Fouillat, P. ; Belot, D.

Author_Institution

IXL Lab., Bordeaux, France

fYear

2000

fDate

2000

Firstpage

783

Lastpage

787

Abstract

The design of a 2 GHz Synchronous Oscillator (SO) dedicated to UMTS 2000 third generation mobile phones is presented. Taking advantage of a 0.35 μm non-selective epitaxy growth (NSEG) SiGe technology, this SO is suitable for a low-power double-loop frequency synthesizer. Simulation results highlight the good trade-off obtained between high frequency characteristics and power consumption, which is of strategic importance for portable electronics

Keywords

Ge-Si alloys; MMIC oscillators; UHF integrated circuits; UHF oscillators; cellular radio; frequency synthesizers; low-power electronics; phase locked loops; synchronisation; 0.35 micron; 2 GHz; 2.7 V; 3 mA; 8.1 mW; PLL; SiGe; SiGe technology; UMTS 2000 applications; double-loop frequency synthesizer; high frequency characteristics; low-power frequency synthesizer; low-power synchronous oscillator; nonselective epitaxy growth technology; portable electronics; power consumption; third generation mobile phones; 3G mobile communication; Bandwidth; Frequency synchronization; Frequency synthesizers; Germanium silicon alloys; Mobile handsets; Oscillators; Phase locked loops; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925949

Filename

925949