Title :
Ruthenium and sulfide passivation of In0.53Ga0.47 As
Author :
Ali, S.T. ; Kumar, A. ; Bose, D.N.
Author_Institution :
Mater. Sci. Centre, Indian Inst. of Technol., Kharagpur, India
Abstract :
The effectiveness of chemical surface modification of In0.53 Ga0.47As using Na2S, (NH4)2 Sx and RuCl3 has been studied through X-ray photoelectron spectroscopy (XPS), spectral response and Schottky barrier height measurements. XPS studies have shown that modification steps caused removal of native oxides and formation of S or Ru bonds with surface atoms. The minority carrier diffusion length Lp thus increased from 1.65 to 1.89 μm due to reduction of surface recombination velocity Sr from 9.5×103 to 2.4×103 cm.s-1. Increase in Schottky barrier height φ3n from 0.26 to 0.58 eV due to (NH4) 2Sx treatment and reduction in ideality factor also occurred
Keywords :
III-V semiconductors; Schottky barriers; X-ray photoelectron spectra; binding energy; bonds (chemical); carrier lifetime; dangling bonds; electron spectroscopy; gallium arsenide; indium compounds; minority carriers; passivation; semiconductor epitaxial layers; surface recombination; surface states; (NH4)2Sx solution; III-V semiconductor; In0.53Ga0.47As; InGaAs-InP; InGaAs:Ru; InGaAs:S; LPE grown samples; Na2S solution; Richardson plot; Ru passivation; RuCl3 solution; Schottky barrier height; XPS studies; bond formation; chemical bonds; chemical surface modification; dangling bonds; ideality factor reduction; lattice matched; minority carrier diffusion length; photoanodes; redox system; removal of native oxides; spectral response; sulfide passivation; surface recombination velocity reduction; surface state density; Aging; Etching; Indium gallium arsenide; Oxidation; Passivation; Surface treatment; TV;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522212
