Title :
Thermal stability of Al0.48In0.52As/Ga0.47In0.53 As/InP heterostructure and its improvement by phosphidization
Author :
Takahashi, N. ; Shiota, M. ; Zhu, Y. ; Shimizu, M. ; Hirata, D. ; Sakamoto, Y. ; Sugino, T. ; Shirafuji, J.
Author_Institution :
Central Res. Labs., Sharp Corp., Nara, Japan
Abstract :
A drastic decrease in the sheet carrier concentration of the modulation-doped Al0.48In0.52As/Ga0.47In0.53 As/InP heterostructure has been observed after O2 plasma treatment followed by thermal treatment up to 350°C. It has been found that the decrease in sheet carrier concentration is caused by the impurities penetrated from the surface of the epilayer, and can be suppressed substantially by using PH3 plasma treatment prior to the O2 plasma and thermal treatments
Keywords :
Hall effect; III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; carrier density; charge compensation; gallium arsenide; high electron mobility transistors; impurity states; indium compounds; phosphorus; plasma applications; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor heterojunctions; surface states; surface treatment; thermal stability; Al0.48In0.52As; AlInAs-GaInAs-InP; AlInAs:P; AlInAs:P,O; Ga0.47In0.53As; HEMT; Hall measurement; III-V semiconductor; MESFET structures; O2 plasma treatment; PH3 plasma treatment; SIMS; donor compensation; epilayers; impurities; modulation-doped heterostructure; phosphidization; sheet carrier concentration; thermal stability; thermal treatment; Epitaxial layers; Fabrication; HEMTs; Heat treatment; Indium phosphide; Iron; Kelvin; MESFETs; Plasma measurements; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522214
