Title :
Formation of PNx/InP structure by in-situ remote plasma processes
Author :
Sakamoto, Y. ; Sugino, T. ; Miyazaki, T. ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
In-situ remote plasma processes consisting of removal of native oxide due to hydrogen (H2) plasma, surface modification due to phosphine (PH3) plasma and deposition of PNx films due to decomposition of PH3 by nitrogen (N2) plasma have been developed. The insulating PNx film with an optical bandgap of 5.3 eV is obtained by remote plasma CVD. Au/PNx /InP tunneling metal-insulator-semiconductor (MIS) type Schottky junction is formed by the in-situ multi-processes. The effective barrier height is estimated to be as high as 0.83 eV. Enhancement of the effective barrier height is due to both effects of the MIS structure and unpinning of the surface Fermi level
Keywords :
Fermi level; III-V semiconductors; MIS devices; MIS structures; Schottky barriers; energy gap; indium compounds; interface states; phosphorus compounds; plasma CVD; semiconductor-insulator boundaries; surface treatment; tunnelling; 0.83 eV; 250 C; 5.3 eV; 60 min; Au-PN-InP; H2 plasma; I-V characteristics; III-V semiconductor; IR transmission spectra; InP; InP-PN; PH3 plasma; PNx film deposition; Richardson plot; Schottky junction; decomposition; effective barrier height; in-situ multiprocesses; in-situ remote plasma processes; insulating film; optical bandgap; remote plasma CVD; removal of native oxide; surface Fermi level unpinning; surface modification; tunneling metal-insulator-semiconductor type; Gold; Hydrogen; Indium phosphide; Insulation; Metal-insulator structures; Nitrogen; Optical films; Photonic band gap; Plasmas; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522216
