DocumentCode
3135464
Title
S-parameter simulation with a new MOSFET model
Author
Qu, Guoli ; Parker, Anthony E.
Author_Institution
Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
fYear
2000
fDate
2000
Firstpage
850
Lastpage
853
Abstract
This paper presents a new MOSFET model, which has been implemented in SPICE3f4 for verification and testing. The DC and S-parameters of a MOSFET are measured and simulated. Simulations performed with the new model agree well with measurements
Keywords
MOSFET; S-parameters; SPICE; UHF field effect transistors; microwave field effect transistors; semiconductor device models; DC parameters; IMD prediction; MOSFET model; S-parameter simulation; SPICE3f4; higher-order continuous model; small-signal applications; Capacitance measurement; Current measurement; Diodes; Electronic equipment testing; Electronic mail; Equations; MOSFET circuits; Performance evaluation; Power MOSFET; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.925963
Filename
925963
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