Substrate modeling and parameter extraction for the small-signal equivalent circuit of a RF silicon MOSFET

Author

Lee, Seonghearn ; Kim, Cheon Soo ; Yu, Hyun Kyu

Author_Institution

Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki, South Korea

fYear

2000

fDate

2000

Firstpage

854

Lastpage

858

Abstract

We propose a physically acceptable small-signal model incorporating the lossy substrate effect for RF Si MOSFETs. This model is developed to eliminate the severe frequency dependence of the drain-source resistance observed from a conventional model. It is demonstrated that the substrate effect results in the frequency-dispersion of effective drain-source resistance and capacitance below 10 GHz. The bulk voltage-dependencies of substrate model parameters are also obtained from a new extraction method based on the simple curve-fit approach

Keywords

MOSFET; UHF field effect transistors; capacitance; electric resistance; elemental semiconductors; equivalent circuits; microwave field effect transistors; semiconductor device models; silicon; substrates; 10 GHz; RF Si MOSFET; Si; bulk voltage-dependencies; curve-fit approach; drain-source capacitance; drain-source resistance; frequency dependence elimination; frequency-dispersion; lossy substrate effect; parameter extraction; small-signal equivalent circuit; small-signal model; substrate model parameters; substrate modeling; Capacitance; Dielectric substrates; Equivalent circuits; Integrated circuit modeling; MOSFET circuits; Parameter extraction; RF signals; Radio frequency; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925964

Filename

925964