Fabrication of InP-based quantum-wires and its application to lasers

Author

Arai, Shigehisa ; Tamura, Munehia ; Shin, Ki-Chul ; Tamura, Shigeo

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

620

Lastpage

623

Abstract

Fabrication technologies of GaInAs(P)/InP long-wavelength lasers consisting of quantum-wire active region are investigated. A combination of an electron-beam (EB) lithography, a fine-pattern etching, and succeeding OMVPE regrowth became more or less reliable process, that was confirmed through a low threshold current room-temperature CW operation of strained quasi-quantum-wire lasers. Measurements of photoluminescence (PL) intensity dependence on etched wire width revealed a low-damage property of electron-cyclotron-resonance reactive-ion-beam-etching (ECR-RIBE) with Cl₂ gas by applying negative acceleration voltage to the sample. An introduction of a surface cleaning process with H₂ gas just after the Cl₂ ECR-RIBE was found to be effective for further reduction of damage especially for the wire width from 10 to 40 nm

Keywords

III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; optical fabrication; photoluminescence; quantum well lasers; semiconductor quantum wells; sputter etching; surface cleaning; vapour phase epitaxial growth; 10 to 40 nm; ECR-RIE; GaInAs-InP; GaInAsP-InP; III-V semiconductor; InP; OMVPE regrowth; electron-beam lithography; etched wire width; fine-pattern etching; long-wavelength lasers; low threshold current room-temperature CW operation; low-damage property; negative acceleration voltage; photoluminescence intensity dependence; quantum-wire active region; quantum-wire fabrication; strained quasi-quantum-wire lasers; surface cleaning; wet chemical etching; Acceleration; Accelerometers; Etching; Gas lasers; Indium phosphide; Lithography; Optical device fabrication; Photoluminescence; Threshold current; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522220

Filename

522220