Title :
Fabrication of InP-based quantum-wires and its application to lasers
Author :
Arai, Shigehisa ; Tamura, Munehia ; Shin, Ki-Chul ; Tamura, Shigeo
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Fabrication technologies of GaInAs(P)/InP long-wavelength lasers consisting of quantum-wire active region are investigated. A combination of an electron-beam (EB) lithography, a fine-pattern etching, and succeeding OMVPE regrowth became more or less reliable process, that was confirmed through a low threshold current room-temperature CW operation of strained quasi-quantum-wire lasers. Measurements of photoluminescence (PL) intensity dependence on etched wire width revealed a low-damage property of electron-cyclotron-resonance reactive-ion-beam-etching (ECR-RIBE) with Cl2 gas by applying negative acceleration voltage to the sample. An introduction of a surface cleaning process with H2 gas just after the Cl2 ECR-RIBE was found to be effective for further reduction of damage especially for the wire width from 10 to 40 nm
Keywords :
III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; optical fabrication; photoluminescence; quantum well lasers; semiconductor quantum wells; sputter etching; surface cleaning; vapour phase epitaxial growth; 10 to 40 nm; ECR-RIE; GaInAs-InP; GaInAsP-InP; III-V semiconductor; InP; OMVPE regrowth; electron-beam lithography; etched wire width; fine-pattern etching; long-wavelength lasers; low threshold current room-temperature CW operation; low-damage property; negative acceleration voltage; photoluminescence intensity dependence; quantum-wire active region; quantum-wire fabrication; strained quasi-quantum-wire lasers; surface cleaning; wet chemical etching; Acceleration; Accelerometers; Etching; Gas lasers; Indium phosphide; Lithography; Optical device fabrication; Photoluminescence; Threshold current; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522220
