Novel self-aligned sub-micron emitter InP/InGaAs HBT´s using T-shaped emitter electrode

Author

Masuda, Hiroshi ; Tanoue, Tomonori ; Oka, Tohru ; Terano, Akihisa ; Pierce, Michael W. ; Hosomi, Kazuhiko ; Ouchi, Kiyoshi ; Mozume, Teruo

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

644

Lastpage

647

Abstract

A new self-aligned process for InP/InGaAs heterojunction bipolar transistors (HBTs) using a T-shaped emitter electrode has been developed. In this process, the T-shaped emitter electrode is used to allow the desired spacing between the emitter mesa and the base ohmic contact. The thickness of the emitter cap and emitter can be thinned independently of the base metal thickness. The thin emitter cap and emitter reduces the difference in characteristics due to the two emitter electrode orientations, parallel and perpendicular to orientation flat. A fabricated HBT shows a cutoff frequency (f_T) of 98 GHz with a 0.9 μm×4.7 μm sub-micron emitter and a maximum f_T of 120 GHz with a 1.4 μm×4.7 μm emitter after it is embedded

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor technology; 120 GHz; 98 GHz; HBTs; InP-InGaAs; T-shaped emitter electrode; cutoff frequency; fabrication; heterojunction bipolar transistors; self-aligned process; sub-micron emitter; Circuit optimization; Cutoff frequency; Electrodes; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Ohmic contacts; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522226

Filename

522226