Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE

Author

Chen, Y.K. ; Humphrey, D. ; Sivco, D. ; Cho, A.Y. ; Lothian, J. ; Kuo, J.M. ; Ren, F. ; Weiner, J.S. ; Tate, A. ; Chang, M.F. ; Bernescut, R.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

656

Lastpage

659

Abstract

We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f_T and f_max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; microwave transistors; molecular beam epitaxial growth; semiconductor growth; 20 GHz; AlInAs-InGaAs; MBE; emitter-base interface; epitaxial growth; integrated HEMT/HBT heterostructure; microwave measurements; pulse-doped structure; Circuits; Cutoff frequency; Etching; Fabrication; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lithography; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522229

Filename

522229