• DocumentCode
    3135715
  • Title

    Non-Au based shallow low resistance ohmic contacts on p-InP

  • Author

    Park, Moon-Ho ; Wang, L.C. ; Deng, Fei ; Clawson, A. ; Lau, S.S. ; Cheng, J.Y. ; Hwang, D.M. ; Palmstrom, C.J.

  • Author_Institution
    Texas A&M Univ., College Station, TX, USA
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    672
  • Lastpage
    673
  • Abstract
    We have developed two shallow low resistance Pd-based ohmic contacts on p-InP based on solid-phase reactions. These contact schemes are the Ge/Pd(Zn) and the Sb/Pd(Zn) contacts. Lowest contact resistivity of the order of ~2 to 5x106 Ω-cm2 has been obtained on p type InP doped to ~2x1018 cm-3 grown by chemical beam epitaxy. The maximum protrusion of the contact into the substrate is ~150 Å for samples annealed at 420°C and ~500 Å for samples annealed at 500°C, which are shallower than the conventional Au-based ohmic contact on p-InP
  • Keywords
    III-V semiconductors; contact resistance; indium compounds; ohmic contacts; InP-Pd:Zn-Ge; InP-Pd:Zn-Sb; annealing; contact resistivity; p-InP; shallow ohmic contacts; solid-phase reactions; Annealing; Conductivity; Contact resistance; Electric resistance; Indium phosphide; Mechanical factors; Ohmic contacts; Solids; Springs; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522233
  • Filename
    522233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3135715