Title :
Non-Au based shallow low resistance ohmic contacts on p-InP
Author :
Park, Moon-Ho ; Wang, L.C. ; Deng, Fei ; Clawson, A. ; Lau, S.S. ; Cheng, J.Y. ; Hwang, D.M. ; Palmstrom, C.J.
Author_Institution :
Texas A&M Univ., College Station, TX, USA
Abstract :
We have developed two shallow low resistance Pd-based ohmic contacts on p-InP based on solid-phase reactions. These contact schemes are the Ge/Pd(Zn) and the Sb/Pd(Zn) contacts. Lowest contact resistivity of the order of ~2 to 5x106 Ω-cm2 has been obtained on p type InP doped to ~2x1018 cm-3 grown by chemical beam epitaxy. The maximum protrusion of the contact into the substrate is ~150 Å for samples annealed at 420°C and ~500 Å for samples annealed at 500°C, which are shallower than the conventional Au-based ohmic contact on p-InP
Keywords :
III-V semiconductors; contact resistance; indium compounds; ohmic contacts; InP-Pd:Zn-Ge; InP-Pd:Zn-Sb; annealing; contact resistivity; p-InP; shallow ohmic contacts; solid-phase reactions; Annealing; Conductivity; Contact resistance; Electric resistance; Indium phosphide; Mechanical factors; Ohmic contacts; Solids; Springs; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522233
