High-spatial-resolution characterization of residual strain in commercial LEC-grown InP(100) wafers

Author

Fukuzawa, M. ; Yamada, M.

Author_Institution

Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

674

Lastpage

677

Abstract

By using a high-spatial-resolution scanning infrared polariscope, in-plane components of residual strain have been characterized quantitatively in 2"φ LEC-grown Fe-doped InP (100) wafers. Their two-dimensional distribution maps reveal characteristic fine structures such as slip-like patterns originated from crystallographic glides during the crystal growth process, and highly-strained spots and filaments due to inclusions or voids inside the wafer, or due to scratches on the surface. Solidification factor dependence of residual strain is also examined together with etch pit density and resistivity

Keywords

III-V semiconductors; crystal growth from melt; inclusions; indium compounds; internal stresses; semiconductor growth; slip; voids (solid); Fe-doped InP (100) wafers; InP; LEC crystal growth; crystallographic glide; etch pit density; filaments; inclusions; residual strain; resistivity; scanning infrared polariscopy; scratches; slip; solidification factor; spatial resolution; spots; two-dimensional distribution; voids; Capacitive sensors; Crystallization; Crystallography; Indium phosphide; Photoelasticity; Polarization; Residual stresses; Spatial resolution; Strain measurement; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522234

Filename

522234