Ferroelectric and SiGe device development for high data rate communications

Author

Mueller, C.H. ; Van Keuls, F.W. ; Romanofsky, R.R. ; Miranda, F.A.

Author_Institution

NASA Glenn Res. Center, Cleveland, OH, USA

fYear

2000

fDate

2000

Firstpage

923

Lastpage

928

Abstract

Future broadband wireless communication systems will require hardware that is capable of processing and tuning high RF power microwave signals K-band frequencies. Integration of ferroelectric and SiGe technologies is proposed for developing low-cost hardware that is capable of providing this functionality. Ferroelectric thin film phase shifters demonstrated 140° of analog tuning at 20 GHz, and computer simulations show the feasibility of K-band SiGe amplifiers. However, minor deviations from ideal film quality make these performance goals difficult to attain, and integration of the two technologies requires that the quality of both materials be maintained

Keywords

Ge-Si alloys; data communication; ferroelectric devices; microwave amplifiers; microwave phase shifters; radio equipment; semiconductor materials; 20 GHz; K-band SiGe amplifier; RF power; SiGe; analog tuning; broadband wireless communication system; computer simulation; data communication; ferroelectric thin film phase shifter; microwave signal; Broadband communication; Ferroelectric materials; Germanium silicon alloys; Hardware; K-band; Microwave devices; Radio frequency; Silicon germanium; Tuning; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925979

Filename

925979