Title :
Ferroelectric and SiGe device development for high data rate communications
Author :
Mueller, C.H. ; Van Keuls, F.W. ; Romanofsky, R.R. ; Miranda, F.A.
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
Abstract :
Future broadband wireless communication systems will require hardware that is capable of processing and tuning high RF power microwave signals K-band frequencies. Integration of ferroelectric and SiGe technologies is proposed for developing low-cost hardware that is capable of providing this functionality. Ferroelectric thin film phase shifters demonstrated 140° of analog tuning at 20 GHz, and computer simulations show the feasibility of K-band SiGe amplifiers. However, minor deviations from ideal film quality make these performance goals difficult to attain, and integration of the two technologies requires that the quality of both materials be maintained
Keywords :
Ge-Si alloys; data communication; ferroelectric devices; microwave amplifiers; microwave phase shifters; radio equipment; semiconductor materials; 20 GHz; K-band SiGe amplifier; RF power; SiGe; analog tuning; broadband wireless communication system; computer simulation; data communication; ferroelectric thin film phase shifter; microwave signal; Broadband communication; Ferroelectric materials; Germanium silicon alloys; Hardware; K-band; Microwave devices; Radio frequency; Silicon germanium; Tuning; Wireless communication;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925979
