Title :
Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm-1 hydrogen related line
Author :
Bliss, D.F. ; Bryant, G.G. ; Gabbe, D. ; Iseler, G. ; Haller, E. ; Zach, F.X.
Author_Institution :
Rome Lab., Hanscom AFB, MA, USA
Abstract :
We have shown that in H2-D2 codoped InP samples a splitting of the 2315.6 cm-1 hydrogen related local vibrational mode is observed. This provides further evidence for the assignment of this line to a fully hydrogenated indium vacancy. Based on a simple argument we suggest that this defect shows electrical activity as a donor in agreement with previously reported results. We observe that this defect is lost during annealing under P-overpressure which has been shown to result in semi-insulating material. We suggest that the loss of intrinsic donors is due to the reduction of the VH4 defect associated with the 2315.6 cm-1 line
Keywords :
III-V semiconductors; annealing; hydrogen; impurity absorption spectra; impurity states; impurity-vacancy interactions; indium compounds; localised modes; 2316 cm-1; H2-D2 codoped InP; InP:H2,D2; absorption line; annealing; donor; electrical activity; hydrogen defect; local vibrational mode; semi-insulating material; vacancy; Absorption; Annealing; Conducting materials; Crystals; Deuterium; Force measurement; Hydrogen; Indium phosphide; Iron; Laboratories;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522235
