• DocumentCode
    3135746
  • Title

    Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm-1 hydrogen related line

  • Author

    Bliss, D.F. ; Bryant, G.G. ; Gabbe, D. ; Iseler, G. ; Haller, E. ; Zach, F.X.

  • Author_Institution
    Rome Lab., Hanscom AFB, MA, USA
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    678
  • Lastpage
    681
  • Abstract
    We have shown that in H2-D2 codoped InP samples a splitting of the 2315.6 cm-1 hydrogen related local vibrational mode is observed. This provides further evidence for the assignment of this line to a fully hydrogenated indium vacancy. Based on a simple argument we suggest that this defect shows electrical activity as a donor in agreement with previously reported results. We observe that this defect is lost during annealing under P-overpressure which has been shown to result in semi-insulating material. We suggest that the loss of intrinsic donors is due to the reduction of the VH4 defect associated with the 2315.6 cm-1 line
  • Keywords
    III-V semiconductors; annealing; hydrogen; impurity absorption spectra; impurity states; impurity-vacancy interactions; indium compounds; localised modes; 2316 cm-1; H2-D2 codoped InP; InP:H2,D2; absorption line; annealing; donor; electrical activity; hydrogen defect; local vibrational mode; semi-insulating material; vacancy; Absorption; Annealing; Conducting materials; Crystals; Deuterium; Force measurement; Hydrogen; Indium phosphide; Iron; Laboratories;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522235
  • Filename
    522235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3135746