Title :
Characterization of InAsP/InGaAsP strained MQW crystals for 1.3μm-wavelength laser diodes usi
Author :
Nakao, Masashi ; Sugiura, Hideo
Keywords :
Crystals; Diode lasers; Epitaxial growth; Photoluminescence; Quantum well devices; Spatial resolution; Temperature; Threshold current; Transmission electron microscopy; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522239
