Title :
Atomic ordering in strained layer multi-quantum well structure
Author :
Otsuka, Nobuyuki ; Kito, Masahiro ; Yabuuchi, Yasufumi ; Ishino, Masato ; Matsui, Yasushi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
The dependence of photoluminescence (PL) characteristics on both SL-MQW structure and epitaxial growth condition is studied. The degradation of PL characteristics in the SL-MQW is confirmed as a broadening of PL linewidth and an unusual temperature-dependence of PL peak wavelength. By using a high-resolution transmission electron microscope (HRTEM), the structure of atomic ordering is demonstrated over entire barrier layers of the SL-MQW structure with degraded PL characteristics. By increasing growth temperature, elimination of the ordering structure as well as improvement of the PL characteristics have been confirmed even in a SL-MQW structure a with large amount of strain
Keywords :
photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line broadening; transmission electron microscopy; vapour phase epitaxial growth; HRTEM; PL linewidth broadening; PL peak wavelength; SL-MQW structure; atomic ordering; barrier layers; degradation; degraded PL characteristics; epitaxial growth condition; growth temperature; high-resolution transmission electron microscope; ordering structure; photoluminescence characteristics; strained layer multi-quantum well structure; temperature-dependence; Atomic layer deposition; Buffer layers; Capacitive sensors; Degradation; Epitaxial growth; Indium phosphide; Substrates; Temperature measurement; Transmission electron microscopy; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522240
