GaAs heteroepitaxy on InP (001) surfaces studied by scanning tunneling microscopy

Author

Ohkouchi, Shunsuke ; Ikoma, Nobuyuki ; Tamura, Masao

Author_Institution

Optoelectron. Technol. Res. Lab., Ibaraki, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

705

Lastpage

708

Abstract

The growth mode transition processes of GaAs heteroepitaxial growth on an InP substrate were investigated using an STM multi-chamber system equipped with a molecular beam epitaxy facility. During the initial stage, the growth mode transition from 2D- to 3D-island growth occurred with more than 2.0 ML GaAs deposition on the InP surface. This 3D-island structure gradually became flat with increasing amount of GaAs deposition, and finally recovered to a GaAs 2D structure. Furthermore, an extended dislocation line can be observed in the STM image of the recovered GaAs surface

Keywords

III-V semiconductors; dislocation density; dislocation structure; gallium arsenide; island structure; molecular beam epitaxial growth; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor growth; surface structure; 2D-island growth; 3D-island growth; GaAs; GaAs 2D structure; GaAs deposition; GaAs heteroepitaxy; GaAs-InP; InP; InP (001) surfaces; STM multi-chamber system; extended dislocation line; growth mode transition; growth mode transition processes; initial stage; molecular beam epitaxy facility; scanning tunneling microscopy; Gallium arsenide; Indium phosphide; Integrated circuit technology; Microscopy; Molecular beam epitaxial growth; Substrates; Surface reconstruction; Surface structures; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522241

Filename

522241