DocumentCode
3135888
Title
Investigation and analysis into device optimization for attaining efficiencies in-excess of 90% when accounting for higher harmonics
Author
Clarke, A.L. ; Akmal, M. ; Lees, J. ; Tasker, P.J. ; Benedikt, J.
Author_Institution
Cardiff Sch. of Eng., Cardiff Univ., Cardiff, UK
fYear
2010
fDate
23-28 May 2010
Firstpage
1114
Lastpage
1117
Abstract
A rigorous, systematic, measurement-founded approach is presented that enables the design of highly efficient power amplifiers. The identified process allows the designer to quickly identify the parameters necessary for completion of a design whilst ascertaining their flexibility and impact on performance degradation. The investigation continues to consider the impact of the higher harmonics and gate bias as design tools on the performance of the design and proposes a strategy that utilizes their positive effect as well as considering the subsequent impact on device scaling. This was carried out on GaAs pHEMT devices from commercial processes that obtained measured peak efficiencies of 90.1% at P1dB in a class-B bias.
Keywords
circuit optimisation; gallium arsenide; high electron mobility transistors; power amplifiers; GaAs; GaAs pHEMT devices; design tools; device optimization; device scaling; gate bias; higher harmonics; performance degradation; power amplifiers; Design optimization; Frequency; Gallium arsenide; Harmonic analysis; Power amplifiers; Power engineering and energy; Power measurement; Power system harmonics; Time measurement; Velocity measurement; Power amplifiers; class-F; inverse class-F; load-pull; microwave measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5517222
Filename
5517222
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