Title :
DFB lasers integrated with Mach-Zehnder optical modulator and a power booster fabricated by selective area growth MOVPE technique
Author :
Tanbun-Ek, T. ; Sciortino, P.F., Jr. ; Sergent, A.M. ; Wecht, K.W. ; Wisk, P. ; Chen, Y.K. ; Bethea, C.G. ; Sputz, S.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We have demonstrated the first monolithic integration of a DFB laser with a Mach-Zehnder type modulator fabricated by the selective area MOVPE growth technique and operating at 1.55 μm. A spatially resolved micro photoluminescence setup was used to characterize the crystal quality. We have achieved a low loss and near 3 dB Y-branch power divider in the structure with the modulator achieving an attenuation up to 17 dB and a π phase shift voltage of 2 V
Keywords :
Mach-Zehnder interferometers; distributed feedback lasers; electro-optical modulation; integrated optics; photoluminescence; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; π phase shift voltage; 1.55 mum; 17 dB; 2 V; 3 dB; DFB lasers; Mach-Zehnder optical modulator; Y-branch power divider; attenuation; crystal quality; low loss; monolithic integration; power booster; selective area growth MOVPE technique; spatially resolved micro photoluminescence; Epitaxial growth; Epitaxial layers; Integrated optics; Monolithic integrated circuits; Optical attenuators; Optical modulation; Phase modulation; Photoluminescence; Power dividers; Spatial resolution;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522243
