Resistive switching in Au/BiFeO3/La0.6Sr0.4MnO3 heterostructures

Author

Feng, L. ; Yang, S. ; Zhang, D. ; Huang, W. ; Yin, Y. ; Dong, S. ; Zhao, W. ; Li, X.

Author_Institution

Dept. of Phys., Univ. of Sci. & Technol. of China, Hefei, China

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

The ferromagnetically coupled ferroelectric domain walls (DWs), which may be more conductive, in multiferroic material BiFeO₃ (BFO), make it possible to realize intrinsic multiferroelectricity in single phase material and open a chance for combining spintronics and ferroelectricity in multifer-roic systems.[1] From the aspect of conductivity, the conductive DWs will influence the macroscopic transport of ferroelectric materials, and thus be coupled with ferroelectric resistive switching, which arises from the modulation of band alignment and contact resistance in the interface between ferroelectric and electrode layers when ferroelectric polarization is switched. In the present work, a room temperature resistive switching behavior of Au/BiFeO₃/La_0.6Sr_0.4MnO₃ (BFO/LSMO) heterostructures accompanied with DWs conductance effect is reported.

Keywords

bismuth compounds; contact resistance; dielectric polarisation; electric domains; ferroelectric materials; ferroelectric switching; ferromagnetic materials; gold; lanthanum compounds; multiferroics; strontium compounds; Au-BiFeO₃-La_0.6Sr_0.4MnO₃; band alignment; contact resistance; ferroelectric materials; ferroelectric polarization; ferroelectric resistive switching; ferromagnetically coupled ferroelectric domain walls; intrinsic multiferroelectricity; Conductivity; Current measurement; Gold; Magnetic field measurement; Pulse measurements; Switches; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157311

Filename

7157311