DocumentCode
3135969
Title
Adjustable supply voltages and refresh cycle for process variations and temperature changing adaptation in DRAM to minimize power consumption
Author
Tran, Le-Nguyen ; Kurdahi, Fadi J. ; Eltawil, Ahmed M.
Author_Institution
EECS, Univ. of California Irvine, Irvine, CA, USA
fYear
2011
fDate
22-22 April 2011
Firstpage
1
Lastpage
4
Abstract
In this paper, we propose an approach to dynamically adjust supply voltages and refresh cycle in Dynamic Random Access Memory (DRAM). With this approach, we can save the chip power consumption with an awareness of process variations and temperature changing. While DRAM systems are generally designed for the worst case condition, they seldom operate under those scenarios. Thus, we can exploit the design slack when operating under more favorable conditions to save power. Simulations showed that it is possible to save power consumption by as much as 40%.
Keywords
DRAM chips; low-power electronics; DRAM; DRAM systems; adjustable supply voltages; chip power consumption; dynamic random access memory; Arrays; Leakage current; Power demand; Random access memory; Temperature measurement; Temperature sensors; Voltage control; DRAM; adaptive design; low-power consumption; process variation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electron Devices (WMED), 2011 IEEE Workshop on
Conference_Location
Boise, ID
ISSN
1947-3834
Print_ISBN
978-1-4244-9740-9
Type
conf
DOI
10.1109/WMED.2011.5767277
Filename
5767277
Link To Document