Title :
Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and fmax of 350 GHz
Author :
Chertouk, M. ; Heiss, H. ; Xu, D. ; Kraus, S. ; Klein, W. ; Bohm, G. ; Trankle, G. ; Weimann, G.
Author_Institution :
Walter-Schottky-Inst., Tech. Univ. Munchen, Germany
Abstract :
We have designed, fabricated, and demonstrated a novel 0.13 μm metamorphic InAlAs/InGaAs HEMT with a composite channel on GaAs substrates, which displays high cut-off frequencies and current drive capability. Such devices exhibit very low g0 of 20 mS/mm and state of the art fmax values of 350 GHz with an fT of 150 GHz. The power gain enhancement is mainly due to the channel design, as confirmed by our theoretical model. Metamorphic growth technology of InAlAs/InGaAs HEMTs with a composite channel will become useful if the reliability of the device can be assured
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor device models; 0.13 mum; 150 GHz; 350 GHz; GaAs; GaAs substrates; I-V characteristics; InAlAs-InGaAs; channel design; composite channels; current drive capability; high cut-off frequencies; metamorphic InAlAs/InGaAs HEMTs; metamorphic growth technology; physical model; power gain enhancement; Cutoff frequency; Gallium arsenide; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Photonic band gap;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522249
